產品簡介
關鍵詞:IXYS,Diode,二極體,快速,Fast,15A,300V,DSEC,DSEC29
HiPerFRED Epitaxial Diode with soft recovery
IFAV = 15A
VRRM = 300V
trr = 30 ns
關鍵詞:IXYS,電晶體,Transisto,IGBT,NPT,35A,600V,IXDH,IXDH35,晶閘管
Parameter
IXDH35N60B
VCES, (V)
600
IC25, TC=25°C, IGBT, (A)
60
IC90, TC=90°C, IGBT, (A)
35
IC110, TC=110°C, IGBT, (A)
VCE(sat), max, TJ=25°C, IGBT, (V)
2.7
tfi, typ, IGBT, (ns)
關鍵詞:IXYS,Rectifier,Bridge,橋式整流器,橋整,三相,3,Phase,50A,1200V,VUE,VUE50
Parameter
VUE50-12NO1
VRRM, (V)
1200
VRSM, (V)
-
IDAVM, (A)
50
@ TH, (°C)
-
@ Tc, (°C)
85
IFSM, 10 ms, Tvj = 45°C, (A)
200
關鍵詞:IXYS,橋式整流器,三相,20A,1200V,橋整,VUO,VUO25,VUO25-12
Parameter
VUO25-12NO8
VRRM, (V)
1200
VRSM, (V)
1300
IDAVM, (A)
20
@ TH, (°C)
-
@ Tc, (°C)
85
IFSM, 10 ms, Tvj = 45°C, (A)
380
關鍵詞:IXYS,Diode,二極體,Rectifier,整流,Cathode,逆向,Stud,螺栓,110A,800V,DSI,DSI75,DSI75-08
Parameter
DSI75-08B
VRRM, (V)
800
IFAVM, Total, (A)
110
IFAVM, per Diode, (A)
110
@ Tc, (°C)
100
PRSM, (kW)
-
IFSM, 10 ms, Tvj = 45°C, (A)
1400
關鍵詞:IXYS,電晶體,Transisto,IGBT,40A,600V,晶閘管,IXGP,IXGP16N
Parameter
IXGP16N60C2
VCES, (V)
600
IC25, TC = 25°C, IGBT, (A)
40
IC90, TC = 90°C, IGBT, (A)
-
IC100, TC = 100°C, IGBT, (A)
-
IC110, TC = 110°C, IGBT, (A)
16
VCE(sat), max, TJ = 25°C, IGBT (V)
關鍵詞:IXYS,電晶體,Transisto,MOSFET,76A,60V,IXFH,IXFH76,晶閘管
Parameter
IXFH76N07-11
VDSS, Max, (V)
70
ID(cont), TC=25°C, (A)
76
RDS(on), max, TJ=25°C, (Ω)
0.011
Ciss, Typ, (pF)
4400
Qg, Typ, (nC)
240
trr, Typ, (ns)
-
trr, Max, (ns)
150
關鍵詞:IXYS,Diode,二極體,Rectifier,整流,逆向,Cathode,螺栓,Stud,49A,800V,DSI,DSI35,DSI35-08
Parameter
DSI35-08A
VRRM, (V)
800
IFAVM, Total, (A)
49
IFAVM, per Diode, (A)
49
@ Tc, (°C)
100
PRSM, (kW)
-
IFSM, 10 ms, Tvj = 45°C, (A)
650
VT0, (V)
0.85
rT, (mOhms)
4.5
關鍵詞:IXYS,二極體,Diode,快速,Fast,30A,DSEI
Parameter
DSEI2x31-10B
VRRM, (V)
1000
IFAVM, d = 0.5, Total, (A)
60
IFAVM, d = 0.5, Per Diode, (A)
30
@ TC, (°C)
50
IFRMS, (A)
70
IFSM, 10 ms, TVJ=45°C, (A)
200
關鍵詞:IXYS,Diode,二極體,Schottky,蕭基,16A,45V,DSS,DSS16
Power Schottky Rectifier
DSS16-0045B
IFAV = 16A
VRSM = 45V
VRRM = 45V
VF = 0.42 ns
關鍵詞:IXYS,Rectifier,Bridge,橋式整流器,橋整,三相,3,Phase,28A,VUO,28
Features
1. Package with DCB ceramic base plate
2. Isolation voltage 3000 V~
3. Planar passivated chips
4. Low forward voltage drop
5. Leads suitable for PC board soldering
關鍵詞:IXYS,Rectifier,Bridge,橋式整流器,橋整,三相,3,Phase,25A,1600V,VUO,VUO25,VUO25-16
Parameter
VUO25-16NO8
VRRM, (V)
1600
VRSM, (V)
1700
IDAVM, (A)
20
@ TH, (°C)
-
@ Tc, (°C)
85
關鍵詞:IXYS,橋式整流器,三相,半控,橋整,167A,1200V,VVZ,VVZ175
Parameter
VVZ175-12io7
VRRM, (V)
1200
VvRMS, (V)
-
IDAVM, (A)
167
@ TH, (°C)
-
@ Tc, (°C)
85
IFSM, 10 ms, Tvj = 45°C, (A)
1500
關鍵詞:IXYS,Diode,二極體,Rectifier,整流,Cathode,逆向,Stud,螺栓,110A,800V,DSI,DSI75,DSI75-12
Parameter
DSI75-12B
VRRM, (V)
1200
IFAVM, Total, (A)
110
IFAVM, per Diode, (A)
110
@ Tc, (°C)
100
PRSM, (kW)
-
IFSM, 10 ms, Tvj = 45°C, (A)
1400
VT0, (V)
0.75
rT, (mOhms)
2.0
關鍵詞:IXGR35N120,IXYS,電晶體,IGBT,70A,1200V
Parameter
IXGR35N120B
VCES, (V)
1200
IC25, TC=25°C, IGBT, (A)
70
IC90, TC=90°C, IGBT, (A)
-
IC100, TC=100°C, IGBT, (A)
IC110, TC=110°C, IGBT, (A)
23
關鍵詞:IXYS,Diode,二極體,Schottky,蕭基,Silicon,16A,100V,DSSK,DSSK16
Parameter
DSSK16-01A
VRRM, (V)
100
IFAVM, d = 0.5, Total, (A)
16
IFAVM, d = 0.5, Per Diode, (A)
8
@ TC, (°C)
165
VF, max, TVJ =125°C, (V)
0.65
@ IF, (A)
10
關鍵詞:IXYS,Diode,二極體,Schottky,蕭基,30A,45V,Silicon,DSSK,DSSK28
Parameter
DSSK28-0045BS
VRRM, (V)
45
IFAVM, d = 0.5, Total, (A)
30
IFAVM, d = 0.5, Per Diode, (A)
15
@ TC, (°C)
135
VF, max, TVJ =125°C, (V)
0.43
@ IF, (A)
15
關鍵詞:IXYS,橋式整流器,橋整,三相,半控,110A,1200V,VVZ,VVZ110,Rectifie,Bridge
Parameter
VVZ110-12io7
VRRM, (V)
1200
VvRMS, (V)
-
IDAVM, (A)
110
@ TH, (°C)
-
@ Tc, (°C)
85
IFSM, 10 ms, Tvj = 45°C, (A)
1150
關鍵詞:IXYS,二極體,Diode,快速,Fast,15A,200V,回復
Parameter
DPG30C200PB
VRRM, (V)
200
IFAVM, d = 0.5, Total, (A)
30
IFAVM, d = 0.5, Per Diode, (A)
15
@ TC, (°C)
145
IFRMS, (A)
35
IFSM, 10 ms, TVJ=45°C, (A)
240
VF, max, TVJ =150°C, (V)
1.01
@ IF, (A)
15