產品簡介
關鍵詞：太陽能 ,多晶,電池片,Solar,Cell,Multi,太陽能電池片
Multi Solar
Format
156x156 ± 0.5 (mm)
Diagonal
220 ± 1.0 (mm)
Thickness
200 ± 20 (μm)
Shape
Square
Front Side
2mm silverbus bars Blue SiNx anti-reflective coating
Back Side
Aluminum-Back surface field 4mm (silver/aluminum) solderin gpads
No
Grade
Model
EffIciency
關鍵詞：太陽能,單晶,電池片,Solar,Cell,Mono,太陽能電池片
Mono Solar
Format
156x156 ± 0.5 (mm)
Diagonal
200 ± 1.0 (mm)
Thickness
200 ± 20 (μm)
Shape
Pseudo square
Front Side
2mm silver bus bars Blue SiNx anti-reflective coating
Back Side
Aluminum-Back surface field 4.0 mm (silver/aluminum) solderin gpads
No
Grade
Model
EffIciency
關鍵詞：Sapphire,Wafer,4-inch,Substrates,藍寶石,基底板,4吋
4-inch Sapphire Substrates
Item
Specification
Unit
Material
>99.99% Single Crystal Al2O3
Orientation
C-axis[0001] tiled M-axis 0.2 ± 0.1°
Degree
Primary Flat
A-Axis [11-20] ± 0.2°
Degree
Diameter
100 ± 0.25
關鍵詞：IC,grade,silicon,wafer,12,inch,12吋,矽晶
SIZE：300mm
TYP
關鍵詞：太陽能,單晶,矽片,Mono,Wafer,156mm,Solar
Mono Wafer 156 *156mm
Item
Specification
Unit
Remarks
Crystal Growth Method
CZ
--
Crystal Orientation
<100> ± 3
degree
Conductivity Type
P
--
Dopant
Boron
關鍵詞：solar,monocrystall,ingot,8吋,單晶,硅棒,矽
solar grade 156x156x200mm monocrystalline ingots
Technical specification
Square size
(156+/-0.5mm) x (156+/-0.5mm)
Diagonal
200.0+/-0.5mm
Type/Dopant
P-type/Boron doped
Orientation of wafers surface
(100)+/-3degree
Orientation of square size
(001)+/-5degree
Resistivity
0.5-3.0 Ohm*cm
Life time
>10.0 µs
Oxygen content
<10 x 1017 at/cm3
Carbon content
<9 x 1016 at
關鍵詞：Poly,Silicon,9N,多晶,矽,硅,Polycrystall
Poly Silicon 9N
Item
Specification
Note
Shspe
Nuggrt
Iralugerr csknuh, crushed feom polysilicon rods.
Size Distribution
Small: 0.3 ~ 80 g
Large: 50 ~ 300 g
Resistivity
P:≥ 3,000 Ωcm
N: ≥ 500 Ωcm
Typical value
Acceptor
≤ 40 ppba
Boron
Donor
≤ 10 ppba
Phosphorus
Carbon
≤ 1.0 ppma
Bulk Metal
Fe, Cu, Ni, Cr ≤ 30 ppba
關鍵詞：太陽能,多晶,矽片,156mm,Solar,Multi,Wafer
Multi Wafer 156*156mm
Item
Specification
Unit
Remarks
Crystal Growth Method
C
--
Conductivity Type
P
--
Dopant
Boron
--
Resistivity
關鍵詞：Indium,Ingot,銦,銦錠,In,金屬,銀灰色金屬
Indium Ingot
In
99.995%
Cu
1.5 ppm
Cd
2.0 ppm
Tl
4.0 ppm
Zn
關鍵詞：太陽能,單晶,矽片,Mono,Wafer,125*125mm,Solar
Mono Wafer 125*125mm
Parameter
Spec
Unit
Type
Mono Solar Wafer
Square
90 ± 0.3
degree
Type-Dopant
P/Boron
Crystal Orientation
<100> ± 1
degree
Oxygen Concentration
關鍵詞：Sapphire,Ingot,2-inch,Substrates,2吋,藍寶石,碇
2-inch Sapphire Ingot
Item
Specification
Crystal Materials
99.996% High purity, Monocrystalline Al2O3
Surface Orientation
C-plane[0001]
M-Axis Orientation Tolerance
0.0° ± 0.1°
A-Axis Orientation Tolerance
0.0° ± 0.1°
Diameter
51.0 mm ± 0.1 mm
Minimum Usable Core Length
> 40.0 mm
Exclusion Allowance
關鍵詞：Poly,Silicon,6N,多晶,矽,Polycrystall,硅
Poly Silicon 6N
Element
Concentratio (ppm wt)
Element
Concentratio (ppm wt)
Li
< 0.001
Ag
< 0.01
Be
< 0.001
Cd
< 0.05
關鍵詞：Poly,Silicon,11N,多晶,矽,Polycrystall,硅
Poly Silicon 11N
Item
Specification
Note
Base Matelial
Polycrystalline Sillicon
Manufactured by Hemlock
Shape
Nugget
Irregular chunk, crushed from polysillicon rods.
Size Distribution
Large: 50-300g
Resistivity
P:≥ 3,000 Ωcm
Typical value
Acceptor
≤ 0.2 ppba
Boron
Donor
≤ 0.9 ppba
Phosphorus
Carbon
≤ 1.0 ppma
關鍵詞：Sapphire,Wafer,2-inch,Substrates,藍寶石,基底板,2吋
2-inch Sapphire Substrates
Item
Specification
Unit
Material
>99.99% Single Crystal Al2O3
Orientation
C-axis[0001] tiled M-axis 0.2 ± 0.1°
Degree
Primary Flat
A-Axis [11-20] ± 0.2°
Degree
Diameter
50.80 ± 0.15
關鍵詞：Multi,Brick,太陽能,多晶碇,多晶,Solar,碇
Bricks are provided in a pre-cropped condition with minimum lengths of 100 mm for processing into wafers
with the following specifications. The bricks would be as-cut from the ingot, and with no grinding, polishing,
and chamfering.
Dimensional / Surtace Characteristics
Nominal Edge Length
156.8 mm
Minimum Cropped Length
100 mm
Maximum Cropped Length
250 mm
Surface Condition
As cut by Meyer Burger BS 805 band saw
Cracks
None visible or detected by IR scan
Inclusions
None visible or detected by IR scan
Electrical Specifications
