元佳宇有限公司

元佳宇有限公司成立於2005年，是一家專業從事工業氣體、特殊氣體、電子氣體、特殊化學品、有機金屬、雷射切割氣體等產品的供應商。公司主要服務於半導體和電子行業，提供高品質的氣體產品和相關服務。該公司的產品廣泛應用於半導體製造、雷射切割、化學氣相沉積等領域，為客戶提供全方位的氣體解決方案。

元佳宇有限公司主要經營工業氣體、特殊氣體、電子氣體、特殊化學品、有機金屬等產品。該公司提供的產品包括氮氣、氧氣、氬氣、氫氣、氦氣、二氧化碳、三甲基矽甲烷、甲基矽甲烷、鍺烷等。該公司致力於為客戶提供高品質、高純度的產品，並且擁有完善的售後服務和技術支持。

在產品方面，該公司提供多種氣體產品，包括六氟丁二烯、四氫化鍺、二氟甲烷、三氟甲烷、一氟甲烷等。這些產品廣泛應用於半導體製造和電子工業，為客戶提供了高品質的原材料和技術支持。

在服務方面，該公司提供氣體的定製和配送服務，確保客戶能夠及時獲得所需的產品。該公司的專業團隊能夠根據客戶的需求，提供量身定制的解決方案，並且在產品使用過程中提供技術支持和售後服務。

元佳宇有限公司自成立以來，一直致力於為客戶提供高品質的產品和服務，贏得了客戶的信任和好評。該公司將繼續努力，不斷提升產品質量和服務水平，為客戶創造更大的價值。

在行業前景方面，隨著半導體和電子行業的不斷發展，對高品質氣體產品的需求將會持續增加。元佳宇有限公司將抓住這一發展機遇，不斷創新，擴大產品線，為客戶提供更多元化的產品和服務，助力客戶在激烈的市場競爭中脫穎而出。

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暫無信息

關鍵詞：CF4,CVD,Halocarbon,difluorometh,etch,四氟化碳,四氟甲烷,蝕刻,

Germane / Germaniun Hydride



Application

Germane gas is a source of hyper-pure germanium in the chemical vapor deposition and molecular beam epitaxy of amorphous germanium layers, silicon-germanium (SiGe) and borongermanium alloys. Germane is used for high performance complementary metal oxide semiconductors and SiGe technologies associated with heterojunction bipolar transistors for high speed digital communications such as broad band and cell phones. Other applications include photon detectors, solar cells, quantum dots and LEDS.





Product Specification



關鍵詞：CHF3,CVD,Halocarbon,etch,trifluoromet,三氟甲烷,蝕刻,

Halocarbon 14 / Trifluoromethane



Application

Halocarbon 14 is combined with oxygen to etch polysilicon, silicon dioxide, silicon nitride, some metals and metal silicides. It can be combined with Halocarbon 116 (C2F6) or used alone to clean wafers and chambers.







Product Specification

Purity     99.999%

N2               5

O2               1

CO2            0.5

CO              0.5

H2O             1


關鍵詞：CVD,CH3F,Halocarbon,difluorometh,etch,一氟甲烷,蝕刻,

Halocarbon 41 / Fluoromethane



Application

Halocarbon 41 is used in the etching application for DRAM and Semiconductor industry.





Product Specification

Purity    99.99%

N2             70

O2             20

H2O          10

HF             0.1
*ppm



關鍵詞：CVD,GeH4,Germane,SiGe,germanium,silicon,四氫化鍺,鍺烷,
Germane / Germaniun Hydride



Application

Germane gas is a source of hyper-pure germanium in the chemical vapor deposition and molecular beam epitaxy of amorphous germanium layers, silicon-germanium (SiGe) and borongermanium alloys. Germane is used for high performance complementary metal oxide semiconductors and SiGe technologies associated with heterojunction bipolar transistors for high speed digital communications such as broad band and cell phones. Other applications include photon detectors, solar cells, quantum dots and LEDS.





Product Specification

Purity:    99.999%

H2              30

N2               1

O2+Ar        0.2

CH4           0.5

CO2           0.5

CO             0.5

Ge2H6       20


關鍵詞：C4F8,CVD,Chamber,Clean,Etch,Fluorocarbon,Halocarbo
HALOCARBON c318 (C4F8)

Octafluorocyclobutane



Application

Halocarbon c318 is used for a chamber cleaning gas for semiconductor industry. C4F8 is used for the replacement of conventional chamber cleaning gas such as C2F6. It is also used as etching gas in semiconductor and DRAM processes.



Production Specification

Purity        99.999%       99.995%

N2                     3                   8

O2                     1                   2

OHC                 4                   10

HF     

關鍵詞：3MS,CH33SiH,LOW,low-k,trimethylsil,三甲基矽烷,

Trimethylsilane / 3MS



Application

Trimethylsilane is used in CVD processes for depositing carbon doped silicate (CDS) low-k dielectric thin film with an oxidant precursor; typically, dielectric constant (k) from 2.7-3.1. It is adopted by many chip makers in their copper/low-k technologies with similar dielectric deposition tool sets. Using various process technologies, porous CDS low-k is also developed with reduced k values.



Product Specification



關鍵詞：CVD,Hexafluorobu,aspect,etch,high,ratio,六氟丁二烯,蝕刻,

Halocarbons 2316 / Hexafluorobutadiene



Application

Halocarbon 2316 (C4F6) is mainly used for DRAM and Semiconductor industry for high aspect ration etching.





Product Specification

Purity      99.99%

Other Fluorocarbons < 400

N2+O2+Ar <50

CO2 <20

H2O <5 ppmw

Acidity (as HF) <5 ppmw

*Unit: ppm



關鍵詞：CH2F2,CVD,Halocarbon,difluorometh,etch,二氟甲烷,蝕刻,

Halocarbon 32 / Difluoromethane



Application

Halocarbon 32 is used in the etching application for DRAM and Semiconductor industry.





Product Specification

Purity    99.99%

N2             40

O2            10

H2O         10

OHC         60
HF            0.1

*ppm



關鍵詞：C3F8,CVD,Chamber,Clean,Fluorocarbon,Halocarbon,八氟丙
HALOCARBON 218 (C3F8)

Perfluoropropane / Octafluoropropane



Application



Halocarbon 218 is used for a chamber cleaning gas for semiconductor industry. C3F8 is used for the replacement of conventional chamber cleaning gas such as C2F6. The product was developed and commercialized in semi application by 3M.





Production Specification



Purity: 99.99%

Air < 80 ppmv

Other Organics < 10 ppmv

Acidity < 0.1 ppmv

H2O < 1 ppmw

Non-Volatile Residue <1 ppmw



Package

Cylinder

8L ~ 50L Steel Seamless Cylinder

1000L Steel Cylinder

Valve

Standard CGA valve

DISS valve

關鍵詞：氣體,gas,校正氣體,蝕刻,SiH4,C3F8,C4F8,CVD,etch,Xenon,標準氣體,spangas,NF3,雷射氣體,GeH4,化學,化工
工業氣體、特殊氣體、電子氣體、特殊化學品、有機金屬、雷射切割氣體、矽甲烷、三氟化氮、四氟化碳、三氟甲烷、二氟甲烷、一氟甲烷、六氟乙烷、八氟丙烷、八氟環丁烷、六氟化硫、二氧化硫、三氟化硼、三氯化硼、氖氣、氪氣、氙氣、同位素氣體、氧17、氧18、氦3、氮氣、氧氣、氬氣、氫氣、氦氣、二氧化碳電子氣體、三甲基矽甲烷、甲基矽甲烷、鍺烷



Specialty gases, Industrial gases,Electronic gases, Specialty chemical, Organic metals, Laser cutting mixture gases, nitrogen, argon, oxygen, hydrogen, helium, refridgerants, R23, R14, R116, SiH4, CF4, CHF3, CH2F2, CH3F, SF6, C2F6, C3F8, C4F8, SO2, BF3, BCl3, O2, N2, Ar, H2, He, 17-O2, 18-O2, 3-He, GeH4, (CH3)3SiH,CH3SiH3,